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============================================DDR Stress Test (3.0.0)Build: Dec 14 2018, 14:12:06NXP Semiconductors.========================================================================================Chip IDCHIP ID = i.MX6 Dual/Quad (0x63)Internal Revision = TO1.6========================================================================================Boot ConfigurationSRC_SBMR1(0x020d8004) = 0x00002840SRC_SBMR2(0x020d801c) = 0x11000001============================================ARM Clock set to 1GHz============================================DDR configurationBOOT_CFG3[5-4]: 0x00, Single DDR channel.DDR type is DDR3Data width: 64, bank num: 8Row size: 14, col size: 10Chip select CSD0 is usedDensity per chip select: 1024MB============================================Current Temperature: 48============================================DDR Freq: 352 MHzddr_mr1=0x00000000Start write leveling calibration...running Write level HW calibrationMPWLHWERR register read out for factory diagnostics:MPWLHWERR PHY0 = 0x87c38387MPWLHWERR PHY1 = 0xe1c1c3c3Write leveling calibration completed, update the following registers in your initialization scriptMMDC_MPWLDECTRL0 ch0 (0x021b080c) = 0x01460000MMDC_MPWLDECTRL1 ch0 (0x021b0810) = 0x0000013FMMDC_MPWLDECTRL0 ch1 (0x021b480c) = 0x012B0136MMDC_MPWLDECTRL1 ch1 (0x021b4810) = 0x011F0123Write DQS delay result:Write DQS0 delay: 0/256 CKWrite DQS1 delay: 198/256 CKWrite DQS2 delay: 191/256 CKWrite DQS3 delay: 0/256 CKWrite DQS4 delay: 182/256 CKWrite DQS5 delay: 171/256 CKWrite DQS6 delay: 163/256 CKWrite DQS7 delay: 159/256 CKStarting DQS gating calibration. HC_DEL=0x00000000 result[00]=0x11111111. HC_DEL=0x00000001 result[01]=0x11111111. HC_DEL=0x00000002 result[02]=0x11111111. HC_DEL=0x00000003 result[03]=0x11111111. HC_DEL=0x00000004 result[04]=0x11111111. HC_DEL=0x00000005 result[05]=0x11111111. HC_DEL=0x00000006 result[06]=0x11111111. HC_DEL=0x00000007 result[07]=0x11111111. HC_DEL=0x00000008 result[08]=0x11111111. HC_DEL=0x00000009 result[09]=0x11111111. HC_DEL=0x0000000A result[0A]=0x11111111. HC_DEL=0x0000000B result[0B]=0x11111111. HC_DEL=0x0000000C result[0C]=0x11111111. HC_DEL=0x0000000D result[0D]=0x11111111ERROR FOUND, we can't get suitable value !!!!dram test fails for all values.Error: failed during ddr calibration
============================================ DDR Stress Test (3.0.0) Build: Dec 14 2018, 14:12:06 NXP Semiconductors.======================================================================================== Chip IDCHIP ID = i.MX6 Dual/Quad (0x63)Internal Revision = TO1.6======================================================================================== Boot ConfigurationSRC_SBMR1(0x020d8004) = 0x00002840SRC_SBMR2(0x020d801c) = 0x11000001============================================ARM Clock set to 1GHz============================================ DDR configurationBOOT_CFG3[5-4]: 0x00, Single DDR channel.DDR type is DDR3Data width: 64, bank num: 8Row size: 14, col size: 10Chip select CSD0 is usedDensity per chip select: 1024MB============================================DDR Stress Test Iteration 1Current Temperature: 57============================================DDR Freq: 396 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testDDR Freq: 413 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testDDR Freq: 432 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testDDR Freq: 452 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testDDR Freq: 475 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testDDR Freq: 500 MHzt0.1: data is addr testt0: memcpy10 SSN x64 testt1: memcpy8 SSN x64 testt2: byte-wise SSN x64 testt3: memcpy11 random pattern testt4: IRAM_to_DDRv2 testt5: IRAM_to_DDRv1 testt6: read noise walking ones and zeros testSuccess: DDR Stress test completed!!!